IPD600N25N3 G

IPD600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) VDS 250 V RDS(on),max 60 mW ID 25 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 • Ideal for high-frequency switching and synchronous rectification Type IPD600N25N3 G Package PG-TO252-3 Marking 600N25N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 25 T C=100 °C 18 Unit A Pulsed drain current2) I D,pulse T C=25 °C 100 Avalanche energy, single pulse E AS I D=25 A, R GS=25 W 210 mJ Reverse diode dv /dt dv /dt 10 kV/µs Gate source voltage V GS ±20 V Power dissipation P tot 136 W Operating and storage temperature T j, T stg -55 ... 175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 1) 2) 55/175/56 J-STD20 and JESD22 See figure 3 Rev. 2.3 page 1 2011-07-14 IPD600N25N3 G Parameter Values Symbol Conditions Unit min. typ. max. - - 1.1 minimal footprint - - 75 6 cm2 cooling area3) - - 50 250 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=90 µA 2 3 4 Zero gate voltage drain current I DSS V DS=200 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=200 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=25 A - 51 60 mW Gate resistance RG - 2.5 - W Transconductance g fs 24 47 - S |V DS|>2|I D|R DS(on)max, I D=25 A 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.3 page 2 2011-07-14 IPD600N25N3 G Parameter Values Symbol Conditions Unit min. typ. max. - 1770 2350 - 101 134 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 3 - Turn-on delay time t d(on) - 10 - Rise time tr - 10 - Turn-off delay time t d(off) - 22 - Fall time tf - 8 - Gate to source charge Q gs - 8 - Gate to drain charge Q gd - 2 - Switching charge Q sw - 5 - Gate charge total Qg - 22 29 Gate plateau voltage V plateau - 4.3 - Output charge Q oss - 45 60 nC - - 25 A - - 100 - 0.9 1.2 - 114 - 700 V GS=0 V, V DS=100 V, f =1 MHz V DD=100 V, V GS=10 V, I D=12 A, R G=1.6 W pF ns Gate Charge Characteristics4) V DD=100 V, I D=12 A, V GS=0 to 10 V V DD=100 V, V GS=0 V nC V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 4) T C=25 °C V GS=0 V, I F=25 A, T j=25 °C V R=100 V, I F=12A, di F/dt =100 A/µs V ns - nC See figure 16 for gate charge parameter definition Rev. 2.3 page 3 2011-07-14 IPD600N25N3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 160 30 140 120 20 ID [A] Ptot [W] 100 80 60 10 40 20 0 0 0 50 100 150 200 0 50 TC [°C] 100 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 1 µs 102 100 10 µs 0.5 ZthJC [K/W] ID [A] 100 µs 101 1 ms 0.2 0.1 10-1 10 ms 0.05 0.02 100 DC 0.01 single pulse 10-2 10-1 10-1 100 101 102 103 10-4 10-3 10-2 10-1 100 tp [s] VDS [V] Rev. 2.3 10-5 page 4 2011-07-14 IPD600N25N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 60 100 10 V 7V 50 80 5V 4.5 V RDS(on) [mW] ID [A] 40 30 20 5V 60 7V 10 V 40 4.5 V 20 10 0 0 0 1 2 3 4 5 0 10 VDS [V] 20 30 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 40 80 70 30 60 gfs [S] ID [A] 50 20 40 30 175 °C 10 20 10 25 °C 0 0 0 2 4 6 8 VGS [V] Rev. 2.3 0 25 50 75 ID [A] page 5 2011-07-14 IPD600N25N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=25 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 200 4 180 3.5 160 900 µA 3 140 VGS(th) [V] RDS(on) [mW] 90 µA 2.5 120 100 98% 80 2 1.5 typ 60 1 40 0.5 20 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 Ciss 103 102 25 °C IF [A] C [pF] Coss 102 175 °C 101 25°C, 98% Crss 101 175°C, 98% 100 0 40 80 120 160 0.5 1 1.5 2 VSD [V] VDS [V] Rev. 2.3 0 page 6 2011-07-14 IPD600N25N3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=12 A pulsed parameter: T j(start) parameter: V DD 100 10 8 100 °C 10 125 V 6 VGS [V] IAS [A] 25 °C 200 V 125 °C 50 V 4 2 1 0 1 10 100 1000 0 10 tAV [µs] 20 30 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 290 V GS Qg 280 VBR(DSS) [V] 270 260 250 V gs(th) 240 Q g(th) 230 Q sw Q gs 220 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev. 2.3 page 7 2011-07-14 IPD600N25N3 G PG-TO252-3: Outline Rev. 2.3 page 8 2011-07-14 IPD600N25N3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.3 page 9 2011-07-14